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Sunday, April 19, 2020 | History

7 edition of Photoinduced defects in semiconductors found in the catalog.

Photoinduced defects in semiconductors

  • 384 Want to read
  • 23 Currently reading

Published by Cambridge University Press in Cambridge, New York .
Written in English

    Subjects:
  • Semiconductors -- Defects.,
  • Photochemistry.

  • Edition Notes

    Includes bibliographical references (p. 201-214) and index.

    StatementDavid Redfield and Richard H. Bube.
    SeriesCambridge studies in semiconductor physics and microelectronic engineering ;, 4
    ContributionsBube, Richard H., 1927-
    Classifications
    LC ClassificationsQC611.6.D4 R43 1996
    The Physical Object
    Paginationx, 217 p. :
    Number of Pages217
    ID Numbers
    Open LibraryOL796661M
    ISBN 100521461960
    LC Control Number95032567


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Photoinduced defects in semiconductors by David Redfield Download PDF EPUB FB2

The book closes with an examination of the effects of photo-induced defects in a range of practical applications.

Throughout, unifying concepts and models are stressed, and the book will be of great use to graduate Photoinduced defects in semiconductors book and researchers interested in the physics and materials science of by: Get this from a library.

Photoinduced defects in semiconductors. [David Redfield; Richard H Bube; Cambridge University Press.] -- This is the first book to give a complete overview Photoinduced defects in semiconductors book the properties of deep-level, localized Photoinduced defects in semiconductors book in semiconductors.

Such comparatively long-lived (or metastable) defects exhibit complex. Introduction: metastable defects III-V compounds: DX and EL2 centers Other crystaline materials Hydrogenated amorphous silicon: properties of defects Hydrogenated amorphous silicon: photoinduced defect kinetics and processes Other amorphous semiconductors Photoinduced defects in devices.

Series Title. This is the first book to give a complete overview of the properties of deep-level, localized defects in semiconductors. Such comparatively long-lived (or metastable) defects exhibit complex interactions with the surrounding material, and can significantly affect the performance and stability of certain semiconductor devices.

After an introductory discussion of metastable defects, the. This is the first book to give a complete overview of the properties of deep-level, localized defects in semiconductors.

These metastable defects exhibit complex interactions with the surrounding material, and can significantly affect the performance and stability of certain semiconductor properties of DX and EL2 centers in III-V compounds are presented and a detailed description Price: $ Product Information.

This book gives a complete overview of the properties of deep-level, localized defects in semiconductors. Photoinduced defects in semiconductors book comparatively long-lived (or metastable) defects exhibit complex interactions with the surrounding material, and can significantly affect the performance and stability of certain semiconductor Photoinduced defects in semiconductors book.

Photoinduced Defects in Semiconductors (Cambridge Studies in Semiconductor Physics and Microelectronic Engineering, Volume 4) [David Redfield, Richard H. Bube] Photoinduced defects in semiconductors book *FREE* shipping on qualifying offers.

Pulsed-Light-Induced Defects Electron-Beam-Induced Defects Defects Induced in the Dark by Carriers Recent Kinetics Results Microscopic Models of Photoinduced Defects in a-Si:H Photoconductivity Phenomena and Models Persistent Photoconductivity in a-Si:H Other Amorphous Semiconductors   Hydrogenated amorphous silicon: properties of defects; 5.

Hydrogenated amorphous silicon: photo-induced defect kinetics and processes; 6. Other amorphous semiconductors; by: 6. Buy Photo-induced Defects Semiconductrs (Cambridge Studies in Semiconductor Physics and Microelectronic Engineering) 1 by David Redfield (ISBN: ) from Amazon's Book Store.

Everyday low prices and free delivery on eligible orders. The book closes with an examination of the effects of photo-induced defects in a range of practical applications.

Throughout, unifying concepts and models are stressed, and the book will be of great use to graduate students and researchers interested in the physics and materials science of semiconductors. Shimakawa, K., Kolobov, A. and Elliott, S.R. () Photoinduced effects and metastability in a-semiconductors and insulators, Advances in Phys – ADS CrossRef Google ScholarAuthor: E.

Mytilineou. Intrinsic Defects in Semiconductors In all previous consideration of crystal structure and crystal growth, for simplicity it has been assumed that the silicon crystal lattice is entirely Photoinduced defects in semiconductors book of defects. Of course, in reality, this cannot be true since at any temperature greater than absolute zero, no crystalFile Size: KB.

defects, when they replace an intended atom at a lattice position, or interstitial impurities [4]. Figure 1 provides examples for four of the previously stated defects.

Fig 1. Common point defects in semiconductors. Substitutional and interstitial defects involve a separate Area defects are thought of as extended point defects,File Size: 68KB.

Theory of Defects in Semiconductors Chapter (PDF Available) in Topics in applied physics January with Reads How we measure 'reads'. Photoinduced defect formation in chalcogenide vitreous semiconductors. Kornelyuk, Khirunenko, L.I. et al. Photoinduced defect formation in chalcogenide vitreous semiconductors.

J Appl Spectr – (). https://doi Cited by: 1. Main Theory of Defects in Semiconductors. Theory of Defects in Semiconductors Manuel Cardona (auth.), David A.

Drabold, Stefan K. Estreicher (eds.) Semiconductor science and technology is the art of defect engineering. The theoretical modeling of defects has improved dramatically over the past decade. You can write a book review and share.

Cambridge Core - Condensed Matter Physics, Nanoscience and Mesoscopic Physics - Extended Defects in Semiconductors - by D. HoltCited by: The purpose of this book is twofold: * to discuss the key properties of the group-IV, III-V and II-VI semiconductors * to systemize these properties from a solid-state physics aspect The majority of the text is devoted to the description of the lattice structural, thermal, elastic, lattice dynamic, electronic energy-band structural, optical and.

25th International Conference on Book of ABstrActs St Petersburg, Russia, July 20–24, Defects in Book of A Semiconductors B str A cts ICDS 9 ICDS ISBN File Size: 1MB. Dopants and Defects in Semiconductors covers the theory, experimentation, and identification of impurities, dopants, and intrinsic defects in semiconductors.

The book fills a crucial gap between. EXTENDED DEFECTS IN SEMICONDUCTORS This book surveys the properties, effects, roles and characterization of structurally extended defects in semiconductors. The basic properties of extended defects (dislocations, stacking faults, grain boundaries and precipitates) are outlined.

Tiny defects in semiconductors created 'speed bumps' for electrons—researchers cleared the path. by Matthew Chin, University of California, Los Angeles.

A review summarising the current state of research in the field, bridging the gaps in the existing literature. All the chapters are written by world leaders in research and development and guide readers through the details of photo-induced metastability and the results of the latest experiments and simulations not found in standard monographs on this topic.

Defects in semiconductors 1. Role and formation of defects in semiconductors 2. Studying defects in semiconductors B. Positron annihilation spectroscopy 1. Background 2. Positron annihilation methods II. Experimental Techniques A. Positrons in solids 1.

Implantation, thermalization, and diffusion by: Deep-level transient spectroscopy (DLTS) is an experimental tool for studying electrically active defects (known as charge carrier traps) in establishes fundamental defect parameters and measures their concentration in the material.

Some of the parameters are considered as defect "finger prints" used for their identifications and analysis. In semiconductors, lattice point defects such as vacancies and interstitials can act as very efficient traps for electrons, holes and excitons, and strongly influence transport and optical properties of the host material.

Excitons bound to defects, if recombine radiatively, lead to light emission at energies lower than the band-to-band optical Cited by: Crystallographic defects are interruptions of regular patterns in crystalline are common because positions of atoms or molecules at repeating fixed distances determined by the unit cell parameters in crystals, which exhibit a periodic crystal structure, are usually imperfect.

Purchase Defect Control in Semiconductors - 1st Edition. Print Book & E-Book. ISBNBook Edition: 1. Magnetic Defects. Magnetic Defects in Semiconductors.

Magnetic Defects in Ferrites. Charge and Spin States in Cobaltites and Manganites. Extended Magnetic Defects. Optical Defects. Pigments, Minerals and Gemstones.

Photoluminescence. Solid‐State Lasers. Color Centers. Electrochromic Films. Photoinduced Magnetism. Answers to Introductory. ♥ Book Title: Photo-induced Defects in Semiconductors ♣ Name Author: David Redfield ∞ Launching: Info ISBN Link: ⊗ Detail ISBN code: ⊕ Number Pages: Total sheet ♮ News id: XrcomqqWeLwC Download File Start Reading ☯ Full Synopsis: "This book gives a complete overview of the properties of deep-level, localized defects in semiconductors.

The Garland Science website is no longer available to access and you have been automatically redirected to INSTRUCTORS. All instructor resources (*see Exceptions) are now available on our Instructor instructor credentials will not grant access to the Hub, but existing and new users may request access student resources previously.

Photoinduced anisotropy in Ag-chalcogenide glasses is clearly different from that appearing in simple covalent compositions. Photoinduced anisotropy appears in several kinds of materials and therefore comparative studies are valuable.

Among the inorganic materials, chalcogenide glass has the potential to give the greatest photoinduced anisotropy. Light-Induced Defects in Semiconductors Kazuo Morigaki, Harumi Hikita, Chisato Ogihara This book covers electronic and structural properties of light-induced defects, light-induced defect creation processes, and related phenomena in crystalline, amorphous, and microcrystalline semiconductors.

¾Extrinsic point defects in ionic crystals - impurities ¾Non-stoichiometry in ionic crystals References: Allen & Thomas, Ch. 5, pp. Swalin: Ch. 14, pp. Electronic defects in semiconductors ¾Electronic defects in intrinsic semiconductors ¾Extrinsic electronic defects in semiconductors - doping optional reading (not tested)File Size: KB.

Find many great new & used options and get the best deals for Nato Science Partnership Subseries 3: Physics and Applications of Non-Crystalline Semiconductors in Optoelectronics 36 by Mario Bertolotti and A.

Andriesh (, Hardcover) at the best online prices at eBay. Free shipping for many products. @article{osti_, title = {The dynamics of photoinduced defect creation in amorphous chalcogenides: The origin of the stretched exponential function}, author = {Freitas, R.

and Shimakawa, K. and Department of Electrical and Electronic Engineering, Gifu University, Gifu and Wagner, T.}, abstractNote = {The article discusses the dynamics of photoinduced defect creations (PDC.

Stanford Libraries' official online search tool for books, media, journals, databases, government documents and more. Band Structure of Semiconductors: International Series on the Science of the Solid State - Ebook written by I.

Tsidilkovski. Read this book using Google Play Books app on your PC, android, iOS devices. Download for offline reading, highlight, bookmark or take notes while you read Band Structure of Semiconductors: International Series on the Science of the Solid State.

An attempt is made to observe light induced defects (LID) in amorphous chalcogenides Se 90 X 10 (X = Sb, In, Ag) thin films prepared by vacuum evaporation technique.

For the determination of light induced defects quantitatively, space charge limited current (SCLC) measurements have been made in a vacuum ∼10 −3 Torr before and after exposing amorphous films to white light for different Cited by: 1.

Electronic structures of pdf and point defects in semiconductors. Yong Zhang* 1. Department of Electrical and Computer Engineering, University of North Carolina at Charlotte, Charlotte, NCUSA.

Abstract. A brief history of the impurity theor iesin Cited by: 2.Semiconductor Physics – K. Seeger The Physics of Semiconductors – Grundmann Basic Semiconductors Physics - Hamaguchi Semi-Insulating Defects Semiconductors with high resistivity, – cm, are called semi-insulating, SI.

High resistivity is related to low freeFile Size: 1MB.TheoryofDefects in Semiconductors With6oFiguresand15Tables Springer. Contents Foreword Quantum Monte Carlo Techniques and Defects in Semiconductors 1 Photoinduced Metastability in Amorphous Solids: An.